IGBT
The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200-3000 V drain-to-source voltage range of operation. Power MOSFETs are still the device of choice for drain-to-source voltages of 1 to 200 V.
IGBT Part List
C67070-A2701-A67
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Siemens Semiconductor Group
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Siemens Semiconductor Group
HGT4E20N60A4DS
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Fairchild Semiconductor
SKW20N60
Fast IGBT NPT-technology with soft, fast recovery anti-parallel EmCon diode
Infineon Technologies
Fast IGBT NPT-technology with soft, fast recovery anti-parallel EmCon diode
Infineon Technologies
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