IRGTDN150M06 FIELD-EFFECT TRANSISTOR OF DATASHEET PDF
IRGTDN150M06
Package :
Manufacturer :
Pins :
Description : TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C)
Temperature : Min °C | Max °C
IRGTDN150M06
Field-effect transistor Website
All about Field-effect transistorPackage :
Manufacturer :
Pins :
Description : TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 200A I(C)
Temperature : Min °C | Max °C
IRGTDN150M06