HGTD7N60A4S9A FIELD-EFFECT TRANSISTOR OF DATASHEET PDF

HGTD7N60A4S9A

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Description : TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 34A I(C) | TO-252AA

Temperature : Min °C | Max °C

HGTD7N60A4S9A