HGT1S2N120BNDS FIELD-EFFECT TRANSISTOR OF DATASHEET PDF
HGT1S2N120BNDS
Package :
Manufacturer : INTERSIL[Intersil Corporation]
Pins :
Description : 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Temperature : Min °C | Max °C
Field-effect transistor Website
All about Field-effect transistorPackage :
Manufacturer : INTERSIL[Intersil Corporation]
Pins :
Description : 1200V, Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Temperature : Min °C | Max °C