HGT1S1N120BNDS FIELD-EFFECT TRANSISTOR OF DATASHEET PDF

HGT1S1N120BNDS

Package :

Manufacturer : Intersil Corporation

Pins :

Description : 5.3A, 1200V, SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE

Temperature : Min °C | Max °C

HGT1S1N120BNDS PDF