HGT1S1N120 FIELD-EFFECT TRANSISTOR OF DATASHEET PDF
HGT1S1N120
Package :
Manufacturer : INTERSIL[Intersil Corporation]
Pins :
Description : 6.2A 1200V Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Temperature : Min °C | Max °C
Field-effect transistor Website
All about Field-effect transistorPackage :
Manufacturer : INTERSIL[Intersil Corporation]
Pins :
Description : 6.2A 1200V Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Temperature : Min °C | Max °C