HGT1S10N120BNS9A FIELD-EFFECT TRANSISTOR OF DATASHEET PDF

HGT1S10N120BNS9A

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Description : TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 17A I(C) | TO-263AB

Temperature : Min °C | Max °C

HGT1S10N120BNS9A