GP1000DHB06S FIELD-EFFECT TRANSISTOR OF DATASHEET PDF
GP1000DHB06S
Package :
Manufacturer :
Pins :
Description : TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 1KA I(C)
Temperature : Min °C | Max °C
GP1000DHB06S
Field-effect transistor Website
All about Field-effect transistorPackage :
Manufacturer :
Pins :
Description : TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 1KA I(C)
Temperature : Min °C | Max °C
GP1000DHB06S